Analysis and Design of a Low Voltage Si LDMOS Transistor
نویسنده
چکیده
This paper presents a compact model of lateral double diffused MOS (LDMOS) transistor having small size and got good result with different characteristics. This model is designed with ATLAS SILVACO and get better simulations of breakdown voltage, on resistance etc. comparing with reference LDMOS. We have designed this device with channel 0.3 μm length and gate 0.75 μm length.
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تاریخ انتشار 2015